• DocumentCode
    233300
  • Title

    Unity gain frequency on FinFET and TFET devices

  • Author

    Agopian, Paula G. D. ; Martino, Joao Antonio ; Vandooren, A. ; Rooyackers, R. ; Simoen, Eddy ; Thean, A. ; Claeys, Cor

  • Author_Institution
    Univ. of Sao Paulo, Sao Paulo, Brazil
  • fYear
    2014
  • fDate
    2-4 April 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work the pTFET is evaluated from analog application point of view, through a direct comparison with the well-known pFinFET performance. This evaluation is mainly focused on the intrinsic voltage gain and the unity gain frequency. Although the total capacitance of FinFETs showed to be worse than for pTFETs, the transconductance behavior plays the main role and results in a higher unity gain frequency for pFinFET devices. However, if the high frequency is not necessary for the application, TFETs are a good candidate due to the huge intrinsic voltage gain enhancement.
  • Keywords
    MOSFET; pFinFET; pTFET; transconductance; unity gain frequency; Capacitance; FinFETs; Logic gates; Performance evaluation; Transconductance; Tunneling; Band-to-band tunneling (BTBT); Capacitance; Multiple Gate Tunneling Field Effect Transistor (MuGTFET); Silicon-On-Insulator (SOI); analog performance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on
  • Conference_Location
    Playa del Carmen
  • Print_ISBN
    978-1-4799-4684-6
  • Type

    conf

  • DOI
    10.1109/ICCDCS.2014.7016152
  • Filename
    7016152