DocumentCode
233300
Title
Unity gain frequency on FinFET and TFET devices
Author
Agopian, Paula G. D. ; Martino, Joao Antonio ; Vandooren, A. ; Rooyackers, R. ; Simoen, Eddy ; Thean, A. ; Claeys, Cor
Author_Institution
Univ. of Sao Paulo, Sao Paulo, Brazil
fYear
2014
fDate
2-4 April 2014
Firstpage
1
Lastpage
4
Abstract
In this work the pTFET is evaluated from analog application point of view, through a direct comparison with the well-known pFinFET performance. This evaluation is mainly focused on the intrinsic voltage gain and the unity gain frequency. Although the total capacitance of FinFETs showed to be worse than for pTFETs, the transconductance behavior plays the main role and results in a higher unity gain frequency for pFinFET devices. However, if the high frequency is not necessary for the application, TFETs are a good candidate due to the huge intrinsic voltage gain enhancement.
Keywords
MOSFET; pFinFET; pTFET; transconductance; unity gain frequency; Capacitance; FinFETs; Logic gates; Performance evaluation; Transconductance; Tunneling; Band-to-band tunneling (BTBT); Capacitance; Multiple Gate Tunneling Field Effect Transistor (MuGTFET); Silicon-On-Insulator (SOI); analog performance;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on
Conference_Location
Playa del Carmen
Print_ISBN
978-1-4799-4684-6
Type
conf
DOI
10.1109/ICCDCS.2014.7016152
Filename
7016152
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