• DocumentCode
    2333000
  • Title

    Modeling of quantum capacitance of Graphene Nanoribbons

  • Author

    Johari, Zaharah ; Amin, N. Aziziah ; Ahmadi, Mohammad Taghi ; Chek, Desmond C Y ; Mousavi, S. Mahdi ; Ismail, Razali

  • Author_Institution
    Dept. of Electron. Eng., Univ. Teknol. Malaysia, Skudai, Malaysia
  • fYear
    2010
  • fDate
    1-3 Dec. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Modeling of quantum capacitance of graphene nanoribbons are being reported. The capacitance in classical approach completely determined by the object´s geometry and a dielectric constant of the medium but quantum effects will give significant impact to the device performance once the transistor approach the size of nanoscale device.
  • Keywords
    capacitance; elemental semiconductors; field effect transistors; graphene; nanostructured materials; narrow band gap semiconductors; permittivity; C; FET; dielectric constant; graphene nanoribbons; nanoscale device; quantum capacitance modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-8853-7
  • Type

    conf

  • DOI
    10.1109/ESCINANO.2010.5701013
  • Filename
    5701013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2333000