Low noise Si based monolithic transimpedance amplifiers for 10 Gbps, 40 Gbps and 100 Gbps applications

Author

Ponchet, A.F. ; Bastida, E.M. ; Panepucci, R.R. ; Swart, J.W.

Author_Institution

Center for Inf. Technol. Renato Archer, DCSH Design House, Campinas, Brazil

fYear

2014

fDate

2-4 April 2014

Firstpage

1

Lastpage

6

Abstract

Design information is given for developing microwave and millimeter-wave silicon based low noise broadband monolithic transimpedance amplifiers. The required layout optimizations for SiGe HBTs and CMOS devices are described and the foundry selection criteria we employed are reported. An efficient high frequency passive devices implementation and high frequency connectivity solutions with external circuitry are also considered. The full design of two CMOS monolithic circuits and three HBT ultra wide band MMICs circuits under fabrication is then described.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; bipolar transistor circuits; elemental semiconductors; field effect MIMIC; field effect MMIC; heterojunction bipolar transistors; integrated circuit design; low noise amplifiers; millimetre wave amplifiers; operational amplifiers; silicon; wideband amplifiers; CMOS devices; CMOS monolithic circuit design; HBT ultrawide band MMICs circuits; Si; SiGe; bit rate 10 Gbit/s; bit rate 100 Gbit/s; bit rate 40 Gbit/s; design information; foundry selection criteria; high frequency connectivity solutions; high frequency passive devices; layout optimizations; microwave silicon based low noise broadband monolithic transimpedance amplifiers; millimeter-wave silicon based low noise broadband monolithic transimpedance amplifiers; Bandwidth; CMOS integrated circuits; Gain; Inductors; Layout; Logic gates; Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4799-4684-6

Type

conf

DOI

10.1109/ICCDCS.2014.7016156

Filename

7016156