Title :
Effect of porosity on the characteristics of GaN grown on sapphire
Author :
Mahmood, Ainorkhilah ; Hassan, Zainuriah ; Yam, Fong Kwong ; Chuah, Lee Siang
Author_Institution :
Nano-Optoelectron. Res. & Technol. Lab., Univ. Sains Malaysia, Minden, Malaysia
Abstract :
In this paper, porous GaN layers were prepared by ultraviolet (UV) assisted electrochemical etching method using unintentionally doped (UID) n-type GaN films grown on sapphire (0001) substrate with GaN thickness of 6 μm. Platinum (Pt) wire is used as a cathode electrode. The wafer is cleaved into few pieces and subsequently dipped into 2 % concentration of KOH electrolyte under illumination of 500 W UV lamp for various anodization duration and applied voltages.
Keywords :
III-V semiconductors; Raman spectra; anodisation; electrochemical electrodes; electrolytes; etching; photoluminescence; porosity; porous semiconductors; semiconductor growth; semiconductor thin films; ultraviolet radiation effects; wide band gap semiconductors; Al2O3; GaN; KOH electrolyte; Raman spectra; UV lamp illumination; anodization duration; cathode electrode; n-type films; photoluminescence; porosity; porous semiconductors; power 500 W; sapphire (0001) substrate; transverse optical phonon modes; ultraviolet assisted electrochemical etching method;
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
DOI :
10.1109/ESCINANO.2010.5701019
