Title :
Short channel continuous model for double-gate junctionless transistors
Author :
Cardoso Paz, Bruna ; Pavanello, Marcelo Antonio ; Avila, Fernand ; Cerdeira, Antonio
Author_Institution :
Dept. of Electr. Eng., Centro Univ. da FEI, São Bernardo do Campo, Brazil
Abstract :
This work aims to present a continuous model of the drain current for short channel double-gate junctionless transistors, from a charge-based model for long channel double-gate devices. The proposed model is based on the influence of the drain bias in the channel potential and the reduction of the effective channel length in saturation regime, for short channel transistors. To model validation it will be used three dimensional numerical simulations.
Keywords :
MOSFET; semiconductor device models; channel potential; charge-based model; drain bias; drain current; effective channel length; long channel double-gate devices; saturation regime; short channel double-gate junctionless transistors; short channel transistors; three dimensional numerical simulations; Degradation; Electric potential; Logic gates; Numerical models; Silicon; Threshold voltage; Transistors; junctionless; model; short channel;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4799-4684-6
DOI :
10.1109/ICCDCS.2014.7016158
