Title :
Heteroepitaxial growth of SiC at low temperatures for the application of a pressure sensor using hot-mesh CVD
Author :
Yasui, Kanji ; Miura, Hitoshi ; Eto, Jyunpei ; Narita, Yuzuru ; Hashim, Ahmad Mustafa
Author_Institution :
Dept. of Electr. Eng., Nagaoka Univ. of Technol, Nagaoka, Japan
Abstract :
In this paper, the epitaxial growth of 3C-SiC films on SOI substrates was investigated by the hot-mesh CVD method. And their piezoresistive property was measured for the application of a pressure sensor. Heteroepitaxial growth of 3C-SiC films on SOI substrates was carried out in a HM-CVD apparatus, as shown in a previous paper [6], using H2 and MMS. SOI substrates with 100nm of top-Si layer and 200nm of buried oxide layer were used. The W mesh (0.1mm diameter, 30mesh/ inch) was placed above a substrate holder. The flow rate of H2 gas during SiC growth was maintained at 100 sccm. The gas flow ratio of H2 to MMS was approximately 400. Total pressure during SiC growth was 530 Pa. Making a bridge circuit with metallic film resistors, piezoresistive property was measured.
Keywords :
chemical beam epitaxial growth; chemical vapour deposition; pressure sensors; semiconductor growth; silicon compounds; wide band gap semiconductors; HM-CVD apparatus; SOI substrates; SiC; SiC growth; W mesh; bridge circuit; buried oxide layer; gas flow ratio; heteroepitaxial growth; hot-mesh CVD method; hydrogen gas flow rate; metallic film resistors; piezoresistive property; pressure 530 Pa; pressure sensor; size 100 nm; size 200 nm; substrate holder; top-Si layer; total pressure;
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
DOI :
10.1109/ESCINANO.2010.5701025
