Gate misalignment evaluation method for commercial MOS trapezoidal gate transistors

Author

Sabbadin, D.S. ; Giacomini, R.C.

Author_Institution

Dept. of Electr. Eng., FEI, Sao Bernardo, Brazil

fYear

2014

fDate

2-4 April 2014

Firstpage

1

Lastpage

5

Abstract

This work addresses the effect of gate misalignment on the electrical characteristics of MOSFET structures with trapezoidal gate shapes. Differential Triangular test structure are used for the extraction of misalignments between gate and the other transistor structures, as a function of the differences in drain currents. Three-dimensional numerical simulation was used for comparison and verification of measurements. These simulations and measurements show how the analytical model developed fits properly to designed structures.

Keywords

MOSFET; numerical analysis; semiconductor device models; semiconductor device testing; MOSFET structures; analytical model; commercial MOS trapezoidal gate transistors; differential triangular test structure; drain currents; electrical characteristics; gate misalignment evaluation method; three-dimensional numerical simulation; trapezoidal gate shapes; Analytical models; Current measurement; Integrated circuit modeling; Logic gates; MOSFET; Silicon-on-insulator; Gate Misalignment; Trapezoidal Gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4799-4684-6

Type

conf

DOI

10.1109/ICCDCS.2014.7016172

Filename

7016172