DocumentCode
233356
Title
Designing high power RF amplifiers: An analytic approach
Author
De Souza, M.M. ; Rasheduzzaman, Md ; Kumar, S. Nandha
Author_Institution
EEE Dept., Univ. of Sheffield, Sheffield, UK
fYear
2014
fDate
2-4 April 2014
Firstpage
1
Lastpage
5
Abstract
An analytic approach to prototype RF Power Amplifiers is demonstrated at 3.5 GHz. The approach can predict not only matching impedances to high accuracy, but also the small signal gain and PldB in comparison to measurement. Moreover, the method allows a simple and direct route to correlate device and process technology to RF system performance currently unfeasible via TCAD modelling. The work is motivated by the objective to facilitate a higher efficiency, lower cost to prototyping, particularly where vendor models from some manufacturers are still under development.
Keywords
impedance matching; microwave power amplifiers; network synthesis; RF power amplifiers; TCAD modelling; frequency 3.5 GHz; high power RF amplifier; impedance matching; small signal gain; Analytical models; Gain; Gallium nitride; HEMTs; Power amplifiers; Radio frequency; Silicon; Analytic Approach; GaN HEMT; RF power Amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on
Conference_Location
Playa del Carmen
Print_ISBN
978-1-4799-4684-6
Type
conf
DOI
10.1109/ICCDCS.2014.7016181
Filename
7016181
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