• DocumentCode
    233356
  • Title

    Designing high power RF amplifiers: An analytic approach

  • Author

    De Souza, M.M. ; Rasheduzzaman, Md ; Kumar, S. Nandha

  • Author_Institution
    EEE Dept., Univ. of Sheffield, Sheffield, UK
  • fYear
    2014
  • fDate
    2-4 April 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    An analytic approach to prototype RF Power Amplifiers is demonstrated at 3.5 GHz. The approach can predict not only matching impedances to high accuracy, but also the small signal gain and PldB in comparison to measurement. Moreover, the method allows a simple and direct route to correlate device and process technology to RF system performance currently unfeasible via TCAD modelling. The work is motivated by the objective to facilitate a higher efficiency, lower cost to prototyping, particularly where vendor models from some manufacturers are still under development.
  • Keywords
    impedance matching; microwave power amplifiers; network synthesis; RF power amplifiers; TCAD modelling; frequency 3.5 GHz; high power RF amplifier; impedance matching; small signal gain; Analytical models; Gain; Gallium nitride; HEMTs; Power amplifiers; Radio frequency; Silicon; Analytic Approach; GaN HEMT; RF power Amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on
  • Conference_Location
    Playa del Carmen
  • Print_ISBN
    978-1-4799-4684-6
  • Type

    conf

  • DOI
    10.1109/ICCDCS.2014.7016181
  • Filename
    7016181