Raman and photoluminescence spectroscopy studies on porous silicon nanostructures

Author

Asli, N.A. ; Yusop, S.F.M. ; Rusop, M. ; Abdullah, S.

Author_Institution

Fac. of Appl. Sci., Univ. Teknol. MARA, Shah Alam, Malaysia

fYear

2010

fDate

1-3 Dec. 2010

Firstpage

1

Lastpage

2

Abstract

In this work, the study of photoluminescence (PL) and Raman spectroscopy of porous silicon nanostructures (NPSi) have been carried out. The samples were prepared by photoelectrochemical anodization method using p-type silicon wafer based. Photoluminescence measurement of NPSi shows increase of PL intensity and blue shift with increasing of etching time. The varies etching time from 20 min to 40 min produced PL emission at a range of 550-800 nm which is in the range of visible PL band. While Raman Spectroscopy measurement shows the spectra were symmetry and broaden when etching time increase from 20 min to 40 min. It may due to lattice mismatch strain and part of distortion when porous layer form with increasing the etching time. The photon energy and full half width maximum (FWHM) measurement were carried out to study the optical properties of NPSi which can be used to study the quantum confinement effect.

Keywords

Raman spectra; anodisation; elemental semiconductors; etching; nanofabrication; nanostructured materials; photoelectrochemistry; photoluminescence; porous semiconductors; semiconductor growth; silicon; Raman spectroscopy; Si; etching; full half width maximum; lattice mismatch strain; optical properties; p-type silicon wafer; photoelectrochemical anodization method; photoluminescence spectroscopy; photon energy; porous silicon nanostructures; quantum confinement effect; time 20 min to 40 min; wavelength 500 nm to 800 nm;

fLanguage

English

Publisher

ieee

Conference_Titel

Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-8853-7

Type

conf

DOI

10.1109/ESCINANO.2010.5701049

Filename

5701049