Electrical characteristic variability in 16-nm multi-gate MOSFET current mirror circuit

Author

Cheng, Hui-Wen ; Li, Yiming

Author_Institution

Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2010

fDate

1-3 Dec. 2010

Firstpage

1

Lastpage

2

Abstract

Electrical Characteristic Variability in 16-nm Multi-Gate MOSFET Current Mirror CircuitIn this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height / the fin width) of 16-nm multi-gate MOSFET and device´s intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For nand p-type current mirror circuits, the fluctuations dominated by RDF and WKF, respectively, could be suppressed by high AR of devices due to improved driving current. For nand p-type current mirror circuits, Iοut fluctuation dominated by RDF and WKF in FinFET (AR = 2) is 2.8 and 2.5 times smaller than that of quasi-planar (AR = 0.5) device, respectively.

Keywords

MOSFET; current mirrors; fluctuations; semiconductor device models; work function; current mirror circuit; electrical characteristic variability; intrinsic parameter fluctuation; multigate MOSFET; oxide-thickness fluctuation; process-variation effect; quasiplanar device; random-dopant fluctuation; size 16 nm;

fLanguage

English

Publisher

ieee

Conference_Titel

Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-8853-7

Type

conf

DOI

10.1109/ESCINANO.2010.5701052

Filename

5701052