Title :
A comparative study of dynamic characteristics on 16-nm-gate planar CMOS and bulk FinFETs´ differential amplifier
Author :
Cheng, Hui-Wen ; Li, Yiming
Author_Institution :
Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The performance comparison of differential amplifier between 16-nm planar CMOS and FinFET with different AR are conducted. The results of this study show that the FinFET exhibits excellent DC characteristic than other structures. The differential amplifier with a higher gain was also obtained using FinFET. We are currently studying the effect of device variability on dynamic characteristics of differential amplifier.
Keywords :
CMOS analogue integrated circuits; MOSFET; differential amplifiers; DC characteristic; bulk FinFET differential amplifier; device variability effect; gate planar CMOS differential amplifier; size 16 nm;
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
DOI :
10.1109/ESCINANO.2010.5701053
