DocumentCode
2333740
Title
A comparative study of dynamic characteristics on 16-nm-gate planar CMOS and bulk FinFETs´ differential amplifier
Author
Cheng, Hui-Wen ; Li, Yiming
Author_Institution
Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2010
fDate
1-3 Dec. 2010
Firstpage
1
Lastpage
2
Abstract
The performance comparison of differential amplifier between 16-nm planar CMOS and FinFET with different AR are conducted. The results of this study show that the FinFET exhibits excellent DC characteristic than other structures. The differential amplifier with a higher gain was also obtained using FinFET. We are currently studying the effect of device variability on dynamic characteristics of differential amplifier.
Keywords
CMOS analogue integrated circuits; MOSFET; differential amplifiers; DC characteristic; bulk FinFET differential amplifier; device variability effect; gate planar CMOS differential amplifier; size 16 nm;
fLanguage
English
Publisher
ieee
Conference_Titel
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-8853-7
Type
conf
DOI
10.1109/ESCINANO.2010.5701053
Filename
5701053
Link To Document