• DocumentCode
    2333801
  • Title

    Feasibility study of 200 kW half-bridge and full-bridge DC/DC converters with 6.5 kV IGBTs

  • Author

    Vinnikov, D. ; Lehtla, M.

  • Author_Institution
    Dept. of Electr. Drives & Power Electron., Tallinn Univ. of Technol., Tallinn
  • fYear
    2008
  • fDate
    11-13 June 2008
  • Firstpage
    1537
  • Lastpage
    1541
  • Abstract
    This paper discusses the half- and full-bridge DC/DC converter topologies for high-power (200 kW) high-voltage (3.6 kV) applications. Focus is on the primary part of these topologies, i.e. the feasibility of two high-voltage IGBTs replacement in the full-bridge by two high-voltage film capacitors in the half-bridge.
  • Keywords
    DC-DC power convertors; bridge circuits; insulated gate bipolar transistors; IGBT; bridge DC-DC converters; high-voltage film capacitors; insulated gate bipolar transistors; power 200 kW; voltage 6.5 kV; Capacitors; Circuit topology; DC-DC power converters; Drives; Insulated gate bipolar transistors; Power electronics; Power generation economics; Pulse width modulation converters; Pulse width modulation inverters; Voltage; Circuit topologies; pulse width modulated power converters; system analysis and design;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics, Electrical Drives, Automation and Motion, 2008. SPEEDAM 2008. International Symposium on
  • Conference_Location
    Ischia
  • Print_ISBN
    978-1-4244-1663-9
  • Electronic_ISBN
    978-1-4244-1664-6
  • Type

    conf

  • DOI
    10.1109/SPEEDHAM.2008.4581238
  • Filename
    4581238