DocumentCode :
2333801
Title :
Feasibility study of 200 kW half-bridge and full-bridge DC/DC converters with 6.5 kV IGBTs
Author :
Vinnikov, D. ; Lehtla, M.
Author_Institution :
Dept. of Electr. Drives & Power Electron., Tallinn Univ. of Technol., Tallinn
fYear :
2008
fDate :
11-13 June 2008
Firstpage :
1537
Lastpage :
1541
Abstract :
This paper discusses the half- and full-bridge DC/DC converter topologies for high-power (200 kW) high-voltage (3.6 kV) applications. Focus is on the primary part of these topologies, i.e. the feasibility of two high-voltage IGBTs replacement in the full-bridge by two high-voltage film capacitors in the half-bridge.
Keywords :
DC-DC power convertors; bridge circuits; insulated gate bipolar transistors; IGBT; bridge DC-DC converters; high-voltage film capacitors; insulated gate bipolar transistors; power 200 kW; voltage 6.5 kV; Capacitors; Circuit topology; DC-DC power converters; Drives; Insulated gate bipolar transistors; Power electronics; Power generation economics; Pulse width modulation converters; Pulse width modulation inverters; Voltage; Circuit topologies; pulse width modulated power converters; system analysis and design;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics, Electrical Drives, Automation and Motion, 2008. SPEEDAM 2008. International Symposium on
Conference_Location :
Ischia
Print_ISBN :
978-1-4244-1663-9
Electronic_ISBN :
978-1-4244-1664-6
Type :
conf
DOI :
10.1109/SPEEDHAM.2008.4581238
Filename :
4581238
Link To Document :
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