Title :
A low phase noise Ka-band voltage controlled oscillator using 0.15 µm GaAs pHEMT technology
Author :
Kao, H.L. ; Shih, S.P. ; Yeh, C.S. ; Chang, L.C.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
A low phase noise, low dissipated power and small sized Ka-band voltage-controlled oscillator (VCO), using dual cross-coupled pair configuration and capacitance-splitting technique is presented. The Ka-band VCO circuit uses 0.15 μm GaAs pHEMT technology. The VCO has low phase noise, of -116.36 dBc/Hz, at a 1 MHz offset and can be tuned from 30.5 to 31.22 GHz. The figure of merit (FOM) is -192.36 dBc/Hz. The power consumption of the VCO with 1.04 mm2 chip area was 24 mW, from a 1 V power supply.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave oscillators; millimetre wave oscillators; phase noise; voltage-controlled oscillators; FOM; GaAs; Ka-band VCO circuit; Ka-band voltage controlled oscillator; capacitance-splitting technique; dual cross-coupled pair configuration; figure of merit; frequency 1 MHz; frequency 30.5 GHz to 31.22 GHz; low dissipated power VCO; low phase noise VCO; pHEMT technology; power 24 mW; size 0.15 micron; voltage 1 V; CMOS integrated circuits; Capacitance; Gallium arsenide; PHEMTs; Phase noise; Voltage-controlled oscillators; GaAs pHEMT; phase noise; voltage controlled oscillators (VCOs);
Conference_Titel :
Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2012 IEEE 15th International Symposium on
Conference_Location :
Tallinn
Print_ISBN :
978-1-4673-1187-8
Electronic_ISBN :
978-1-4673-1186-1
DOI :
10.1109/DDECS.2012.6219029
