Study on SiGe nanowire shape engineering and Ge condensation

In recent years, Si and Si_1-xGe_x nanowires have received tremendous attention especially for their potential in optical and electronics devices. With the thermal oxidation technique, they are well compatible with current CMOS-based electronic devices and thus can be building blocks for nanoscale device applications ranging from biological sensors to nanoelectronics to catalyst-assisted growing techniques. However, the dry oxidation of Si_1-xGe_x nanowires has not attracted much attention. The models in the simulators also generally fail in predicting the evolution and the final shape of the nanostructures. In this study, we deduced a universal parameter set from silicon fin oxidation experiment and used it to study shape engineering and Ge condensation in SiGe nanowire formation with TSUMPREM-IV simulator.