Statistical simulation of MOSFETs using TCAD: meshing noise problem and selection of factors

Author

Shigyo, N. ; Tanimoto, H. ; Morishita, T. ; Sugawara, K. ; Wakita, N. ; Asahi, Y.

Author_Institution

Toshiba Corp., Yokohama, Japan

fYear

1998

fDate

35953

Firstpage

10

Lastpage

13

Abstract

The parametric yield strongly depends on statistical process fluctuations. Statistical simulation is thus needed for a robust design of process, device and circuit. This article describes the statistical simulation of MOSFETs using technology CAD (TCAD). We used this approach to solve the so-called meshing noise problem caused by discretization in process/device simulation. Also, we propose a new selection method of the factors for obtaining BSIM3v3 worst-case models based on principal component analysis (PCA)

Keywords

MOSFET; principal component analysis; semiconductor device models; semiconductor device noise; technology CAD (electronics); BSIM3v3 worst-case models; MOSFETs; TCAD; meshing noise; model factor selection; parametric yield; principal component analysis; process/device simulation discretization; robust circuit design; robust device design; robust process design; statistical process fluctuations; statistical simulation; technology CAD; Circuit noise; Circuit simulation; Computer aided engineering; Fluctuations; Laboratories; MOSFET circuits; Noise generators; Semiconductor device noise; Semiconductor device testing; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Metrology, 1998. 3rd International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-4338-7

Type

conf

DOI

10.1109/IWSTM.1998.729754

Filename

729754