Methodology of MOSFET characteristics fluctuation description using BSIM3v3 SPICE model for statistical circuit simulations

Author

Azuma, Atsushi ; Oishi, Amane ; Okayama, Yasunori ; Kasai, Kunihiro ; Toyoshima, Yoshiaki

Author_Institution

Toshiba Corp., Yokohama, Japan

fYear

1998

fDate

35953

Firstpage

14

Lastpage

17

Abstract

A methodology for inclusion of MOSFET characteristics fluctuation into BSIM3v3 SPICE model is proposed. Fundamentally physical parameters such as gate oxide thickness (TOX), channel concentration (NCH), gate length (L), and parasitic resistance (RDSW) are chosen as an independent parameter set. Parameters which should be expressed by the above set are described in simple physical equations. This method allows not only statistical simulation based on electric test data that can be easily measured with a full-auto tester system, but also characteristics prediction of modified device structures or of future technology devices

Keywords

MOSFET; SPICE; carrier density; dielectric thin films; electric resistance; integrated circuit modelling; semiconductor device models; semiconductor device testing; statistical analysis; BSIM3v3 SPICE model; MOSFET characteristics fluctuation; MOSFET characteristics fluctuation description; Si; SiO₂-Si; channel concentration; characteristics prediction; electric test data; full-auto tester system; gate length; gate oxide thickness; independent parameter set; modified device structures; parasitic resistance; physical equations; physical parameters; statistical circuit simulations; statistical simulation; CMOS technology; Channel bank filters; Circuit simulation; Fluctuations; MOSFET circuits; Parasitic capacitance; SPICE; Semiconductor device modeling; Threshold voltage; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Metrology, 1998. 3rd International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-4338-7

Type

conf

DOI

10.1109/IWSTM.1998.729756

Filename

729756