DocumentCode :
2334307
Title :
Statistical aspects of tuning simulators to noisy data
Author :
Davis, Joseph C. ; Rao, Suraj ; Vasanth, Karthik ; Saxena, Sharad ; Burch, Richard ; Mozumder, P.K.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
1998
fDate :
35953
Firstpage :
18
Lastpage :
21
Abstract :
The purpose of TCAD tools is to reduce the cost of developing new semiconductor technologies by replacing real wafers with simulations. If the process flows and device structures can be simulated accurately, then new device designs can be analyzed using simulations instead of real wafers. However, due to uncertainty in material coefficients and deficiencies in the physical models, process and device simulators often fail to provide the accuracy necessary for predictive device design, thereby limiting the impact of TCAD on device development cost. To address this problem, process and device simulators are often tuned to match experimental data, i.e. the simulator coefficients are adjusted such that the simulator outputs match experimentally measured data. However, the experimental data to which the simulators are tuned contain noise due to both process variation and measurement noise. Since tuning parameters are adjusted such that the simulator outputs, which are deterministic, match the experimental data, the uncertainty in the data implies uncertainty in the optimal values of the tuning parameters. This paper presents a methodology for tuning to uncertain and sparse experimental data and estimating the tuning parameter distribution based on the experimental data uncertainty. This distribution can be used to determine whether there is enough data to generate confidence in the optimal values of the tuned parameters. Additionally, we show how the tuned parameter distribution can be used to estimate the uncertainty in simulations conducted at conditions other than those used for tuning
Keywords :
circuit simulation; parameter estimation; semiconductor device noise; semiconductor device testing; semiconductor process modelling; statistical analysis; technology CAD (electronics); TCAD tools; data uncertainty; deterministic simulator outputs; device design analysis; device development cost; device simulator tuning; device simulators; device structures; material coefficients; measurement noise; noisy data; physical models; predictive device design; process flows; process simulator tuning; process simulators; process variation noise; semiconductor technology development; simulator coefficients; simulator outputs; simulator tuning; tuned parameter distribution; tuning parameter distribution estimation; tuning parameters; wafer simulations; Accuracy; Analytical models; Costs; Impedance matching; Noise measurement; Predictive models; Semiconductor device modeling; Semiconductor device noise; Semiconductor materials; Uncertainty;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Statistical Metrology, 1998. 3rd International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-4338-7
Type :
conf
DOI :
10.1109/IWSTM.1998.729757
Filename :
729757
Link To Document :
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