Title :
A new defect distribution metrology with a consistent discrete exponential formula and its applications
Author :
Sato, Hisako ; Ikota, Masami ; Sugimoto, Aritoshi ; Masuda, Hiroo
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
We have proposed a novel discrete exponential distribution function, which describes defect-count distributions on wafers and/or chips more accurately, especially for near-defect-free conditions. The conventional approach based on a gamma probability density function (g-PDF) is known to fail in terms of expressing defect-free wafers or chips, which always gives 0 PDF value. Since the number of faults/defects should be countable (discrete) and analyzed in terms of a nondefective chip yield, the g-PDF cannot be used due to its inaccuracy in near-defect-free conditions. A new discrete formula which is based on the idea of a discrete exponential PDF has been developed. It describes the situation of the defect-count distribution of near-defect-free wafers well. It is experimentally proved that defect-count distributions are approximated with the new model to within an average error of about 0.01 defects/wafer using film deposition process data
Keywords :
exponential distribution; integrated circuit measurement; integrated circuit yield; semiconductor process modelling; statistical analysis; chip defect-count distributions; defect distribution metrology; defect-count distribution; defect-free chips; defect-free wafers; discrete exponential PDF; discrete exponential distribution function; discrete exponential formula; film deposition process data; gamma probability density function; model average error; near-defect-free conditions; near-defect-free wafers; nondefective chip yield; wafer defect-count distributions; CMOS technology; Convolution; Exponential distribution; Gaussian distribution; Hydrogen; Inspection; Metrology; Particle measurements; Probability density function; Semiconductor device modeling;
Conference_Titel :
Statistical Metrology, 1998. 3rd International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-4338-7
DOI :
10.1109/IWSTM.1998.729761