• DocumentCode
    2334474
  • Title

    Nanosensors for ubiquitous network

  • Author

    Othman, Masuri

  • Author_Institution
    MEMS/NEMS Cluster, MIMOS Berhad, Kuala Lumpur, Malaysia
  • fYear
    2010
  • fDate
    1-3 Dec. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper MIMOS and the R&D work on the nanomaterials for sensing elements and of material functionalization will be pursued towards application of sensors. The facility for nanomaterial growth is already available together with other equipments for material characterization such as atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) to determine surface morphology, grain size and structure; small angle X-ray scattering (SAXS) for particle size distribution; and Raman spectroscopy to characterize the stress in materials and chemical binding. In this presentation, some of the work in the realization of nanosensor materials and their characterization will be disclosed.The availability of a 0.35μm wafer fabrication facility in MIMOS also allows us to fabricate nanostructures using standard semiconductor technology for application in nano-electromechanical sensors. In MIMOS, we are able to fabricate polysilicon, silicon dioxide, silicon nitride and tungsten nanostructures with dimensions down to 10 nm on an 8" silicon wafer by spacer technology.
  • Keywords
    MIS devices; X-ray scattering; atomic force microscopy; elemental semiconductors; grain size; nanofabrication; nanomechanics; nanoparticles; nanosensors; particle size; scanning electron microscopy; silicon; silicon compounds; stress analysis; surface morphology; transmission electron microscopy; tungsten; AFM; MIMOS; Raman spectroscopy; SAXS; SEM; Si; Si3N4; SiO2; TEM; W; atomic force microscopy; chemical binding; grain size; grain structure; nanoelectromechanical sensors; nanomaterial growth; nanosensors; particle size distribution; polysilicon nanostructure; scanning electron microscopy; silicon dioxide nanostructure; silicon nitride nanostructures; size 0.35 mum; small angle X-ray scattering; stress analysis; surface morphology; transmission electron microscopy; tungsten nanostructure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-8853-7
  • Type

    conf

  • DOI
    10.1109/ESCINANO.2010.5701089
  • Filename
    5701089