• DocumentCode
    2334482
  • Title

    Impact of unrealistic worst case modeling on the performance of VLSI circuits in deep sub-micron CMOS technologies

  • Author

    Nardi, A. ; Neviani, A. ; Zanoni, E. ; Guardiani, C.

  • Author_Institution
    Padova Univ., Italy
  • fYear
    1998
  • fDate
    35953
  • Firstpage
    42
  • Lastpage
    45
  • Abstract
    The impact of process fluctuations on the variability of deep sub-micron (DSM) VLSI circuit performances is investigated in this paper. In particular, we show that, as process dimensions scale down in the sub half-micron region, the relative weight of process variability tends to increase, thus wearing down a nonnegligible portion of the benefits that are expected from minimum feature size scaling. Therefore, in order to better exploit the advance of process technology, it is essential to adopt a realistic approach to worst case modeling, as in the assigned probability technique (APT) (Dal Fabbro et al, Proc. 32nd ACM/IEEE Design Automation Conf., pp. 702-6, 1995). The application of the APT technique to a 16-bit ripple-carry adder designed in 0.35 μm, 0.25 μm and 0.18 μm CMOS technologies with a power supply ranging from 3.3 V down to 1 V demonstrates how the manufacturability of DSM designs is going to be a vital factor for the successful implementation of high performance or low-power systems in 0.18 μm and lesser technologies
  • Keywords
    CMOS logic circuits; VLSI; adders; carry logic; integrated circuit design; integrated circuit modelling; logic design; probability; statistical analysis; 0.18 micron; 0.25 micron; 0.35 micron; 1 to 3.3 V; 16 bit; APT technique; CMOS VLSI circuit performance; CMOS ripple-carry adder design; CMOS technology; VLSI circuit performance variability; assigned probability technique; manufacturability; power supply voltage; process dimension scaling; process fluctuations; process technology; process variability; ripple-carry adder; unrealistic worst case modeling; worst case modeling; Adders; CMOS process; CMOS technology; Circuits; Computer aided software engineering; Libraries; Microelectronics; Power supplies; Semiconductor device modeling; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Statistical Metrology, 1998. 3rd International Workshop on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    0-7803-4338-7
  • Type

    conf

  • DOI
    10.1109/IWSTM.1998.729766
  • Filename
    729766