DocumentCode :
2334678
Title :
Nanotechnology for solid-state lighting
Author :
Jin, Chua Soo
Author_Institution :
Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2010
fDate :
1-3 Dec. 2010
Firstpage :
1
Lastpage :
2
Abstract :
Nanotechnology for solid-state lighting is being reported. The use of nanostructures for development of high brightness and white light LEDs for illumination application is presented. InGaN is the compound semiconductor used for the fabrication of high brightness LEDs. The zinc oxide nanorods are grown directly onto the LED surface by an inexpensive solution method. As much as 60% more light is extracted from the LED.
Keywords :
II-VI semiconductors; III-V semiconductors; brightness; gallium compounds; indium compounds; light emitting diodes; lighting; nanofabrication; semiconductor growth; wide band gap semiconductors; zinc compounds; InGaN; ZnO; brightness; illumination; nanotechnology; solid-state lighting; solution based growth method; white light LED; zinc oxide nanorods;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
Type :
conf
DOI :
10.1109/ESCINANO.2010.5701097
Filename :
5701097
Link To Document :
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