Statistical modeling of MOS transistors

Author

Conti, M. ; Crippa, P. ; Orcioni, S. ; Turchetti, C.

Author_Institution

Ancona Univ., Italy

fYear

1998

fDate

35953

Firstpage

92

Lastpage

95

Abstract

A new model has been developed for the covariance matrix of device parameters. The analysis has been carried out starting from a general statistical model relating random variations of device parameters to the stochastic behaviour of process parameters. The model predicts a dependence of correlation between devices fabricated in the same die on their dimensions and mutual distances, so that mismatch can be derived as a particular case of equally designed devices

Keywords

CMOS integrated circuits; MOSFET; covariance analysis; covariance matrices; integrated circuit design; integrated circuit modelling; semiconductor device models; CMOS technology; MOS transistors; device correlation dependence; device dimensions; device mutual distances; device parameter covariance matrix model; equally designed device mismatch; general statistical model; random device parameter variations; statistical modeling; stochastic process parameter behaviour; CMOS technology; Covariance matrix; Fabrication; IEEE members; MOSFETs; Probability; Random variables; Semiconductor device modeling; Space technology; Stochastic processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Metrology, 1998. 3rd International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-4338-7

Type

conf

DOI

10.1109/IWSTM.1998.729778

Filename

729778