Title :
Measurement of hydroxyl radicals in an atmospheric pressure discharge plasma by using laser-induced fluorescence
Author :
Ono, Ryo ; Oda, Tetsuji
Author_Institution :
Dept. of Electr. Eng., Tokyo Univ., Japan
Abstract :
Hydroxyl radicals were measured by laser-induced fluorescence (LIF) using a tunable KrF excimer laser in an atmospheric pressure discharge plasma. In that LIF, all of the OH (A/sup 2//spl Sigma/-X/sup 2//spl Pi/(3,0)) branches were identified within a tunable range of the laser. A time evolution of OH density showed that OH density increased with humidity and oxygen concentration. This results indicates OH radicals were mainly produced by chemical reactions of H/sub 2/O with O radicals. There could be another OH production process other than H/sub 2/O+O/spl rarr/2OH. OH generated by the another reaction reached a peak at about 5 /spl mu/s after discharge. It may have been a collisional dissociation of H/sub 2/O with electrons. OH density augmented after 0.6-/spl mu/s pulsed discharge for several tens /spl mu/s, then decreasing exponentially. The OH lifetime shortened with increasing pressure. This result implies OH were mainly decreased by a reaction with NO/sub 2/ generated from O/sub 2/ and N/sub 2/. Two-dimensional OH distribution was also measured using two-dimensional LIF (2-D LIF) technique. They showed OH radicals proceeded uniformly along a discharge path, then decreasing with horizontal diffusion.
Keywords :
chemical variables measurement; excimer lasers; fluorescence; plasma diagnostics; 0.6 mus; H/sub 2/O; KrF; OH density; OH lifetime; OH production process; atmospheric pressure discharge plasma; collisional dissociation; discharge path; humidity; hydroxyl radicals measurement; laser-induced fluorescence; oxygen concentration; pulsed discharge; time evolution; tunable KrF excimer laser; Atmospheric measurements; Atmospheric-pressure plasmas; Chemical lasers; Fluorescence; Humidity; Measurement by laser beam; Plasma density; Plasma measurements; Pressure measurement; Tunable circuits and devices;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.729813