DocumentCode
2336090
Title
The modeling and simulation of the frequency characteristics on deep-submicron fully depleted SOI BJMOSFET
Author
Yan, Zhang ; Yun, Zeng
Author_Institution
Nanyang Inst. of Technol., Nanyang, China
fYear
2012
fDate
3-5 June 2012
Firstpage
138
Lastpage
140
Abstract
The high frequency model of deep-submicron fully depleted SOI BJMOSFET has been proposed theoretically and its frequency characteristics curves have been achieved by HSPICE software. Compared to deep-submicron fully depleted SOI MOSFET at the same condition, it´s proved that the new-style SOI device has much better frequency characteristics and more rapid working speed. So it´s a kind of new excellent SOI device.
Keywords
MOSFET; silicon-on-insulator; HSPICE software; deep-submicron fully depleted SOI BJMOSFET; frequency characteristics; Analytical models; Capacitance; Integrated circuit modeling; Logic gates; MOSFET circuits; Production; Silicon on insulator technology; Deep submicron; FD; Frequency characteristics; High frequency model; SOI BJMOSFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Robotics and Applications (ISRA), 2012 IEEE Symposium on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4673-2205-8
Type
conf
DOI
10.1109/ISRA.2012.6219141
Filename
6219141
Link To Document