DocumentCode :
2336475
Title :
Worst case operating frequency determination of CMOS digital VLSI circuits operating in radiation environments
Author :
Kaul, N. ; Bhuva, B.L. ; Kerns, S.E.
Author_Institution :
Space Electron. Res. Group, Vanderbilt Univ., Nashville, TN, USA
fYear :
1990
fDate :
11-13 Mar 1990
Firstpage :
511
Lastpage :
515
Abstract :
There are in existence a number of CAD tools that perform circuit simulations and analyze circuit performance before fabrication. Most of these simulators do not take long-term environmental effects into account. These environmental effects on VLSI circuits are specifically more important for performance estimation in hostile environments such as high temperature and space radiation environments. The ICs designed for normal environments fail to function normally in these hostile environments. A study is made of the effects of one such environment, the space-radiation environment, on CMOS digital circuits, and methods for extending the operational life of a part by changing operating parameters, namely, operating frequency, are proposed. Although the study specifically concentrates on the space environment, the concept can be applied to any hostile environment
Keywords :
CMOS integrated circuits; VLSI; circuit analysis computing; digital integrated circuits; integrated circuit technology; CMOS digital VLSI circuits; hostile environments; long-term environmental effects; operational life; space radiation environments; worst case operating frequency; CMOS digital integrated circuits; Circuit analysis; Circuit optimization; Circuit simulation; Design automation; Fabrication; Frequency; Performance analysis; Temperature; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
System Theory, 1990., Twenty-Second Southeastern Symposium on
Conference_Location :
Cookeville, TN
ISSN :
0094-2898
Print_ISBN :
0-8186-2038-2
Type :
conf
DOI :
10.1109/SSST.1990.138199
Filename :
138199
Link To Document :
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