Title :
Switching dynamics of power bipolar transistor in high-frequency electronic ballast
Author :
Mulay, A. ; Trivedi, M. ; Vijayalakshmi, R. ; Shenai, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
This paper presents a detailed performance evaluation of power bipolar junction transistor (BJT), in a high frequency electronic ballast. The finite element device structure is used in the mixed circuit and device simulator to predict the internal charge dynamics occurring within the switch, when subjected to stress in an actual ballast circuit. The circuit simulator is used to analyze the circuit and device interaction. The experimental results are compared with the simulation results which helps in analyzing the power loss mechanism in the device and to illustrate the importance of specific device physical characteristics in ballast circuit optimization. This paper also presents a comprehensive analysis of the tradeoffs in device and circuit parameters that are crucial for developing next generation low-power high frequency rugged electronic ballast.
Keywords :
bipolar transistor switches; circuit simulation; invertors; lamp accessories; losses; power bipolar transistors; power semiconductor switches; switching circuits; ballast circuit; device simulator; finite element device structure; high-frequency electronic ballast; internal charge dynamics; inverters; low-power high frequency rugged electronic ballast; mixed circuit; power bipolar transistor; power loss mechanism; switching dynamics; Analytical models; Bipolar transistors; Charge carrier processes; Circuit simulation; Electronic ballasts; Finite element methods; Frequency; Predictive models; Switches; Switching circuits;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.729990
