DocumentCode
2337540
Title
Efficiency of SiC JFET-Based Inverters
Author
Zhang, Hui ; Tolbert, Leon M.
Author_Institution
Min Kao Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
fYear
2009
fDate
25-27 May 2009
Firstpage
2056
Lastpage
2059
Abstract
The state-of-the-art SiC JFETs are characterized. Three-phase full-bridge inverter power loss models based on experimental data are established and used to estimate inverter efficiency. The impact of load power, temperature, and switching frequency on inverter efficiency is analyzed and demonstrated. The efficiency of the SiC JFET inverters based on present device quality is above 98% with full load current, and more efficient than most conventional Si inverters, especially at high temperature and high frequency.
Keywords
invertors; junction gate field effect transistors; silicon compounds; JFET-based inverters; SiC; three-phase full-bridge inverter power loss models; Frequency estimation; Intrusion detection; Inverters; JFETs; Manufacturing; Schottky diodes; Silicon carbide; Switching frequency; Temperature distribution; Testing; JFET; Silicon Carbide; efficiency; inverter; power loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics and Applications, 2009. ICIEA 2009. 4th IEEE Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4244-2799-4
Electronic_ISBN
978-1-4244-2800-7
Type
conf
DOI
10.1109/ICIEA.2009.5138563
Filename
5138563
Link To Document