DocumentCode
2338011
Title
Technical thin film formation methods in low temperature plasma
Author
Montasser, Kadry I. ; Mohamed, Osama I.
Author_Institution
Dept. of Electr. Eng., Al-Azhar Univ., Cairo, Egypt
fYear
1994
fDate
10-12 May 1994
Firstpage
483
Abstract
The relation between the nucleation and growth of thin films, and the deposition variable is presented. This relation serves as a rough guide in the preparation of films with particular properties. The selection of the deposition technique for making the film is one of the fatal factors that should be considered. The properties and applications of low pressure low temperature plasma are given. The formation of Si-N (Silicon-Nitrogen) thin film on silicon substrate at low pressure low temperature by plasma CVD is presented
Keywords
nucleation; plasma CVD; plasma CVD coatings; silicon; silicon compounds; substrates; Si; SiN; deposition variable; growth; low pressure low temperature plasma; low temperature plasma; nucleation; plasma CVD; thin film formation; Amorphous materials; Plasma applications; Plasma materials processing; Plasma properties; Plasma temperature; Plasma x-ray sources; Semiconductor thin films; Sputtering; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Instrumentation and Measurement Technology Conference, 1994. IMTC/94. Conference Proceedings. 10th Anniversary. Advanced Technologies in I & M., 1994 IEEE
Conference_Location
Hamamatsu
Print_ISBN
0-7803-1880-3
Type
conf
DOI
10.1109/IMTC.1994.351914
Filename
351914
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