• DocumentCode
    233810
  • Title

    Energy Efficient Memory Decoder Design for Ultra-low Voltage Systems

  • Author

    Viveka, K.R. ; Amrutur, Bharadwaj

  • Author_Institution
    Electr. Commun. Eng. Dept., Indian Inst. of Sci., Bangalore, India
  • fYear
    2014
  • fDate
    5-9 Jan. 2014
  • Firstpage
    145
  • Lastpage
    149
  • Abstract
    This paper presents a low energy memory decoder architecture for ultra-low-voltage systems containing multiple voltage domains. Due to limitations in scalability of memory supply voltages, these systems typically contain a core operating at subthreshold voltages and memories operating at a higher voltage. This difference in voltage provides a timing slack on the memory path as the core supply is scaled. The paper analyzes the feasibility and trade-offs in utilizing this timing slack to operate a greater section of memory decoder circuitry at the lower supply. A 256x16-bit SRAM interface has been designed in UMC 65nm low-leakage process to evaluate the above technique with the core and memory operating at 280 mV and 500 mV respectively. The technique provides a reduction of up to 20% in energy/cycle of the row decoder without any penalty in area and system-delay.
  • Keywords
    SRAM chips; decoding; low-power electronics; SRAM interface; UMC low-leakage process; core supply; energy efficient memory decoder design; memory path; multiple voltage domains; size 65 nm; timing slack; ultra-low voltage systems; voltage 280 mV to 500 mV; Decoding; Delays; Logic gates; Memory management; Random access memory; Level shifter; Memory interface design; Subthreshold; Ultra low power;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design and 2014 13th International Conference on Embedded Systems, 2014 27th International Conference on
  • Conference_Location
    Mumbai
  • ISSN
    1063-9667
  • Type

    conf

  • DOI
    10.1109/VLSID.2014.32
  • Filename
    6733121