DocumentCode
233810
Title
Energy Efficient Memory Decoder Design for Ultra-low Voltage Systems
Author
Viveka, K.R. ; Amrutur, Bharadwaj
Author_Institution
Electr. Commun. Eng. Dept., Indian Inst. of Sci., Bangalore, India
fYear
2014
fDate
5-9 Jan. 2014
Firstpage
145
Lastpage
149
Abstract
This paper presents a low energy memory decoder architecture for ultra-low-voltage systems containing multiple voltage domains. Due to limitations in scalability of memory supply voltages, these systems typically contain a core operating at subthreshold voltages and memories operating at a higher voltage. This difference in voltage provides a timing slack on the memory path as the core supply is scaled. The paper analyzes the feasibility and trade-offs in utilizing this timing slack to operate a greater section of memory decoder circuitry at the lower supply. A 256x16-bit SRAM interface has been designed in UMC 65nm low-leakage process to evaluate the above technique with the core and memory operating at 280 mV and 500 mV respectively. The technique provides a reduction of up to 20% in energy/cycle of the row decoder without any penalty in area and system-delay.
Keywords
SRAM chips; decoding; low-power electronics; SRAM interface; UMC low-leakage process; core supply; energy efficient memory decoder design; memory path; multiple voltage domains; size 65 nm; timing slack; ultra-low voltage systems; voltage 280 mV to 500 mV; Decoding; Delays; Logic gates; Memory management; Random access memory; Level shifter; Memory interface design; Subthreshold; Ultra low power;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design and 2014 13th International Conference on Embedded Systems, 2014 27th International Conference on
Conference_Location
Mumbai
ISSN
1063-9667
Type
conf
DOI
10.1109/VLSID.2014.32
Filename
6733121
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