Leakage Modeling for Devices with Steep Sub-threshold Slope Considering Random Threshold Variations

In this paper we propose a generic approach to statistically model leakage variation of devices with steep sub-threshold slope caused by random threshold variations. Monte Carlo simulation results based on our model show less than 11% error in 6σ leakage current estimation compared to 65% error using conventional square root method. A design example based on SRAM bit line leakage issue is also presented to show the correctness of our model in a realistic circuit scenario. This general-purpose modeling technique could be a useful tool in estimating leakage in a variety emerging device technology.