Title :
Microscopic optical seam induced current measurements and their applications
Author :
Haraguchi, Koshi
Author_Institution :
JEOL Liosonic Co Ltd., Tokyo, Japan
Abstract :
The OBIC (Optical Beam Induced Current) system, which has been designed for detecting and analyzing the defect characteristics of the failed sample devices, is described with experimental results from defect characterizations of sample devices. Since a conforcal laser microscope has been adopted as a basic system, high spatial resolution power can be obtained, compared with an ordinary optical microscope. The detection limit of leakage current is improved up to 1 nA. Therefore, this system can reveal a number of semiconductor device phenomena such as defects of pn junctions, latch-up phenomena and the current leakage through the oxide layer by tunneling effect as well as by point contact
Keywords :
OBIC; fault location; integrated circuit testing; semiconductor device testing; 1 nA; OBIC; Optical Beam Induced Current; conforcal laser microscope; current leakage; current measurement; defect characteristics; defect characterizations; failed sample devices; latch-up phenomena; leakage current; microscopic optical seam; optical microscope; oxide layer; pattern density; pn junctions; point contact; semiconductor device; spatial resolution power; tunneling effect; Current measurement; Failure analysis; Leak detection; Leakage current; Optical beams; Optical design; Optical microscopy; Power lasers; Semiconductor lasers; Spatial resolution;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1994. IMTC/94. Conference Proceedings. 10th Anniversary. Advanced Technologies in I & M., 1994 IEEE
Conference_Location :
Hamamatsu
Print_ISBN :
0-7803-1880-3
DOI :
10.1109/IMTC.1994.352005
