Thermally-coupled IC interconnect networks

Author

Labun, Andrew

Author_Institution

Sch. of Eng., Univ. of British Columbia, Kelowna, BC

fYear

2008

fDate

18-20 June 2008

Firstpage

1

Lastpage

5

Abstract

Analytical, steady-state temperature trajectories on highly coupled interconnects can be found using a symbolic solution method, with little incremental computational cost. This method is used to examine the influence of vias, pitch, linewidth variation, and anisotropic thermal conductance due to porosity variation on the coupled temperature trajectories in a regular, two-layer interconnect grid. Temperature and its sensitivity to process variation in low-k dielectric are seen to be topology dependent, requiring thermal network analysis.

Keywords

VLSI; integrated circuit interconnections; low-k dielectric thin films; porosity; thermal analysis; thermal conductivity; VLSI interconnect; anisotropic thermal conductance; linewidth variation; low-k dielectric materials; pitch; porosity variation; steady-state temperature trajectories; symbolic solution method; thermal network analysis; thermally-coupled IC interconnect networks; two-layer interconnect grid; vias; Anisotropic magnetoresistance; Dielectric substrates; Dielectric thin films; Integrated circuit interconnections; Resistors; Temperature sensors; Testing; Thermal conductivity; Thermal resistance; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed-Signals, Sensors, and Systems Test Workshop, 2008. IMS3TW 2008. IEEE 14th International

Conference_Location

Vancouver, BC

Print_ISBN

978-1-4244-2395-8

Electronic_ISBN

978-1-4244-2396-5

Type

conf

DOI

10.1109/IMS3TW.2008.4581631

Filename

4581631