DocumentCode :
23404
Title :
A Simulation Study of Multiplication Factor in Cylindrical Diode
Author :
Mahjour-Shafiei, Masoud ; Afhami, Maryam Mohamadzadeh
Author_Institution :
Dept. of Phys., Univ. of Tehran, Tehran, Iran
Volume :
42
Issue :
9
fYear :
2014
fDate :
Sept. 2014
Firstpage :
2273
Lastpage :
2276
Abstract :
Multiplication factor in a cylindrical diode has been studied using a 1d3v particle in cell simulation code for both inner cathode and outer cathode polarities. The simulation results are compared with a simple theoretical model. Simulations that are based on realistic cross sections are in qualitative agreement with the theoretical model. The disagreement between theoretical model and simulations is explained in view of the fact that in the simulation, realistic cross section is employed; however, the theoretical model is based on a simple ionization factor concept.
Keywords :
Monte Carlo methods; cathodes; discharges (electric); ionisation; plasma diodes; plasma simulation; plasma sources; 1d3v particle in cell simulation code; Monte Carlo collision; cylindrical diode; gas discharge; inner cathode polarities; ionization factor concept; multiplication factor; outer cathode polarities; realistic cross sections; simple theoretical model; Cathodes; Data models; Electric potential; Ionization; Mathematical model; Plasmas; Semiconductor process modeling; Gas discharge; Monte Carlo collision; particle-in-cell simulation;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2014.2341643
Filename :
6876153
Link To Document :
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