Effect of pressure treatment on electrical properties of hydrogen-doped silicon

Author

Surma, B. ; Misiuk, A. ; Jun, J. ; Rozental, M. ; Wnuk, A. ; Ulyashin, A.G. ; Antonova, I.V. ; Popov, V.P. ; Job, R.

Author_Institution

Inst. of Electron. Technol., Warszawa, Poland

fYear

1998

fDate

5-7 Oct 1998

Firstpage

47

Lastpage

50

Abstract

Annealing of CZ-Si at 450°C under enhanced argon pressure (HP) results in significant increase of electron concentration. FTIR measurements confirmed that enhanced double thermal donors (TDD) generation in CZ-Si is responsible for this phenomenon. In hydrogenated (etched in hydrogen plasma or implanted by hydrogen) silicon samples, annealed at 450°C-HP, it was slated marked enhancement of the TDD generation rate during first two hours of annealing. It can mean that hydrogen acts as catalyst in formation of small oxygen clusters at HP. The role of HP in enhancement of TDD creation during annealing at 450°C was stated to be of primary importance also for hydrogen doped silicon

Keywords

Fourier transform spectra; annealing; electron density; elemental semiconductors; high-pressure effects; hydrogen; hydrogenation; impurity absorption spectra; impurity states; infrared spectra; semiconductor doping; silicon; 450 C; Czochralski crystal; FTIR spectra; Si:H,O; annealing; catalyst; double thermal donor; electrical properties; electron concentration; hydrogen doped silicon; hydrogen implantation; hydrogen plasma etching; hydrogenation; oxygen cluster; pressure treatment; Annealing; Argon; Electrons; Etching; Frequency; Hydrogen; Plasma applications; Plasma measurements; Plasma temperature; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

0-7803-4909-1

Type

conf

DOI

10.1109/ASDAM.1998.730163

Filename

730163