Title :
Low cost technology for high frequency bipolar integrated circuits
Author :
Badila, M. ; Codreanu, C. ; Brezeanu, G.
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
A new low cost technology for high frequency bipolar circuits is proposed. It upgrades a classical “LISA” (Local Implantation Self Aligned) technology using a 14 masks process. The “basic” npn elementary transistor in the new technology has a 2.2 GHz cutoff frequency, and the parasitic elements in circuits are reduced. The performances of the new technology are verified by means of some demonstrator circuits: a “Gilbert” cell with a bandwidth of 700 MHz, and some broadband, high frequency amplifiers
Keywords :
UHF integrated circuits; bipolar integrated circuits; integrated circuit technology; ion implantation; 2.2 GHz; 700 MHz; Gilbert cell; LISA technology; broadband amplifier; high frequency bipolar integrated circuit; local implantation self-aligned process; npn transistor; parasitic element; Bipolar integrated circuits; Bipolar transistors; Costs; Frequency; Implants; Integrated circuit technology; Isolation technology; Protection; Research and development; Space technology;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730164
