Low cost technology for high frequency bipolar integrated circuits

Author

Badila, M. ; Codreanu, C. ; Brezeanu, G.

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania

fYear

1998

fDate

5-7 Oct 1998

Firstpage

51

Lastpage

54

Abstract

A new low cost technology for high frequency bipolar circuits is proposed. It upgrades a classical “LISA” (Local Implantation Self Aligned) technology using a 14 masks process. The “basic” npn elementary transistor in the new technology has a 2.2 GHz cutoff frequency, and the parasitic elements in circuits are reduced. The performances of the new technology are verified by means of some demonstrator circuits: a “Gilbert” cell with a bandwidth of 700 MHz, and some broadband, high frequency amplifiers

Keywords

UHF integrated circuits; bipolar integrated circuits; integrated circuit technology; ion implantation; 2.2 GHz; 700 MHz; Gilbert cell; LISA technology; broadband amplifier; high frequency bipolar integrated circuit; local implantation self-aligned process; npn transistor; parasitic element; Bipolar integrated circuits; Bipolar transistors; Costs; Frequency; Implants; Integrated circuit technology; Isolation technology; Protection; Research and development; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

0-7803-4909-1

Type

conf

DOI

10.1109/ASDAM.1998.730164

Filename

730164