MOVPE growth and characterisation of (Al,Ga)N layers

The group III nitrides are promising materials for optoelectronic devices high temperature electronics and high power microwave devices. At the moment, MOVPE (Metalorganic Vapour Phase Epitaxy) seems to be the most successful and the most promising method and /spl alpha/ sapphire is believed to be the best substrate for GaN deposition. The paper presents the achievements in (Al,Ga)N deposition at the Institute of Microsystem Technology, Wroclaw University of Technology. The correlation between structural, optical and electrical properties of thick undoped high temperature GaN buffer layer and thin undoped AlGaN spacer layer grown on it are shown and discussed.