DocumentCode
2340657
Title
Photo-electrical properties of thin ZnO:Al films
Author
Donoval, D. ; Uherek, F. ; Rheinländer, B.
Author_Institution
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
fYear
1998
fDate
5-7 Oct 1998
Firstpage
67
Lastpage
70
Abstract
Photo-electrical properties of ZnO and ZnO:Al thin film prepared by rf sputtering are investigated. The prepared samples exhibit a very wide change of sheet resistance within ten orders of magnitude depending on preparation procedure. A low value of doping independent mobility has been observed. An optical band gap shift towards higher energies is presented
Keywords
II-VI semiconductors; aluminium; carrier mobility; electrical resistivity; energy gap; optical constants; semiconductor thin films; sputtered coatings; wide band gap semiconductors; zinc compounds; RF sputtering; ZnO:Al; ZnO:Al thin film; carrier mobility; doping; optical band gap; photoelectrical properties; sheet resistance; Annealing; Artificial intelligence; Conductive films; Conductivity; Doping; Optical films; Photonic band gap; Piezoelectric films; Sputtering; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730168
Filename
730168
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