Title :
Photo-electrical properties of thin ZnO:Al films
Author :
Donoval, D. ; Uherek, F. ; Rheinländer, B.
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
Photo-electrical properties of ZnO and ZnO:Al thin film prepared by rf sputtering are investigated. The prepared samples exhibit a very wide change of sheet resistance within ten orders of magnitude depending on preparation procedure. A low value of doping independent mobility has been observed. An optical band gap shift towards higher energies is presented
Keywords :
II-VI semiconductors; aluminium; carrier mobility; electrical resistivity; energy gap; optical constants; semiconductor thin films; sputtered coatings; wide band gap semiconductors; zinc compounds; RF sputtering; ZnO:Al; ZnO:Al thin film; carrier mobility; doping; optical band gap; photoelectrical properties; sheet resistance; Annealing; Artificial intelligence; Conductive films; Conductivity; Doping; Optical films; Photonic band gap; Piezoelectric films; Sputtering; Zinc oxide;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730168
