Processing and characterization of GaAs surface-barrier heterostructures with texturized interface

Author

Borkovskaya, O.Yu. ; Dmitruk, N.L. ; Mamontova, I.B. ; Mamykin, S.V.

Author_Institution

Inst. of Phys. of Semicond., Acad. of Sci., Kiev, Ukraine

fYear

1998

fDate

5-7 Oct 1998

Firstpage

71

Lastpage

74

Abstract

The possibility to control photosensitivity of Au(ITO)/GaAs surface-barrier heterostructure by evaporated processing including texturation and passivation of interface on investigated. The complex method of their characteristic is proposed that included analysis of optical, electrical and photoelectric characteristics of structure. The obtained results allowed to determine the change of optical and recombination parameters of interface caused by investigated processing

Keywords

III-V semiconductors; electron-hole recombination; gallium arsenide; passivation; photoconductivity; semiconductor-metal boundaries; surface texture; Au-GaAs; GaAs surface barrier heterostructure; ITO-GaAs; InSnO-GaAs; electrical characteristics; interface processing; optical characteristics; passivation; photoelectric characteristics; photosensitivity; recombination; texturation; Gallium arsenide; Gold; Indium tin oxide; Optical attenuators; Optical saturation; Passivation; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Surface texture;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

0-7803-4909-1

Type

conf

DOI

10.1109/ASDAM.1998.730169

Filename

730169