Title :
Processing and characterization of GaAs surface-barrier heterostructures with texturized interface
Author :
Borkovskaya, O.Yu. ; Dmitruk, N.L. ; Mamontova, I.B. ; Mamykin, S.V.
Author_Institution :
Inst. of Phys. of Semicond., Acad. of Sci., Kiev, Ukraine
Abstract :
The possibility to control photosensitivity of Au(ITO)/GaAs surface-barrier heterostructure by evaporated processing including texturation and passivation of interface on investigated. The complex method of their characteristic is proposed that included analysis of optical, electrical and photoelectric characteristics of structure. The obtained results allowed to determine the change of optical and recombination parameters of interface caused by investigated processing
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; passivation; photoconductivity; semiconductor-metal boundaries; surface texture; Au-GaAs; GaAs surface barrier heterostructure; ITO-GaAs; InSnO-GaAs; electrical characteristics; interface processing; optical characteristics; passivation; photoelectric characteristics; photosensitivity; recombination; texturation; Gallium arsenide; Gold; Indium tin oxide; Optical attenuators; Optical saturation; Passivation; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Surface texture;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730169
