Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP

Author

Rusu, E.V. ; Slobodchikov, S.V. ; Salikhov, H.M. ; Turcu, M.

Author_Institution

Inst. of Appl. Phys., Chisinau, Moldova

fYear

1998

fDate

5-7 Oct 1998

Firstpage

75

Lastpage

78

Abstract

The electrical and photoelectrical characteristics of the isotype p-InP/p-InGaAs heterostructure with the Pd-p-InP Schottky barrier as well as the impact of 500 ppm H₂ atmosphere on these characteristics have been studied. The main change of photo-emf in the gas environment was found to be around λ(max)¹=0.90 μm in the Schottky diode photoresponse spectrum. This behaviour is determined by the change of interface properties and existence of deep level traps in the band gap of the InP layer

Keywords

III-V semiconductors; Schottky barriers; deep levels; gallium arsenide; indium compounds; palladium; photovoltaic effects; semiconductor heterojunctions; semiconductor-metal boundaries; H₂; H₂ gas atmosphere; Pd-InP-InGaAs-InP; Pd-p-InP/p-InGaAs/p-InP; Schottky barrier; deep level trap; isotype heterostructure; photo-EMF; photoelectrical properties; Atmosphere; Charge transfer; Gas detectors; Hydrogen; Indium phosphide; Photodetectors; Schottky barriers; Schottky diodes; Semiconductor-metal interfaces; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

0-7803-4909-1

Type

conf

DOI

10.1109/ASDAM.1998.730170

Filename

730170