Title :
Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP
Author :
Rusu, E.V. ; Slobodchikov, S.V. ; Salikhov, H.M. ; Turcu, M.
Author_Institution :
Inst. of Appl. Phys., Chisinau, Moldova
Abstract :
The electrical and photoelectrical characteristics of the isotype p-InP/p-InGaAs heterostructure with the Pd-p-InP Schottky barrier as well as the impact of 500 ppm H2 atmosphere on these characteristics have been studied. The main change of photo-emf in the gas environment was found to be around λ(max)1=0.90 μm in the Schottky diode photoresponse spectrum. This behaviour is determined by the change of interface properties and existence of deep level traps in the band gap of the InP layer
Keywords :
III-V semiconductors; Schottky barriers; deep levels; gallium arsenide; indium compounds; palladium; photovoltaic effects; semiconductor heterojunctions; semiconductor-metal boundaries; H2; H2 gas atmosphere; Pd-InP-InGaAs-InP; Pd-p-InP/p-InGaAs/p-InP; Schottky barrier; deep level trap; isotype heterostructure; photo-EMF; photoelectrical properties; Atmosphere; Charge transfer; Gas detectors; Hydrogen; Indium phosphide; Photodetectors; Schottky barriers; Schottky diodes; Semiconductor-metal interfaces; Substrates;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730170
