Phase distortion measurements for saturated MESFETs loaded with arbitrary impedance terminations

Author

Ghannouchi, Fadhel M. ; Beauregard, Fransois ; Zhao, Guoxiang

Author_Institution

Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada

fYear

1994

fDate

10-12 May 1994

Firstpage

291

Abstract

A measurement method is developed and implemented to simultaneously perform phase distortion, output power and power-added efficiency measurements for arbitrary load impedances over a wide dynamic power range on saturated MESFETs. The phase distortion is measured by a precise phase shifter and a phase comparator, which consists of two quadrature hybrids, two combiners and a matched pair of diode-detectors. A 30 dBm sweeping power range, including about 10~15 dBm beyond compression, has been performed on a GaAs MESFET NE8001 at 1.7 GHz for different loads

Keywords

III-V semiconductors; Schottky gate field effect transistors; electric distortion; electric distortion measurement; electric variables measurement; gallium arsenide; microwave measurement; phase comparators; phase measurement; power amplifiers; semiconductor device testing; 1.7 GHz; GaAs; GaAs MESFET; NE8001; arbitrary impedance terminations; combiners; diode-detectors; output power; phase comparator; phase distortion measurement; power amplifier; power limiter; power-added efficiency measurements; precise phase shifter; quadrature hybrids; saturated MESFET; Distortion measurement; Dynamic range; Impedance measurement; MESFETs; Performance evaluation; Phase distortion; Phase measurement; Phase shifters; Power generation; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 1994. IMTC/94. Conference Proceedings. 10th Anniversary. Advanced Technologies in I & M., 1994 IEEE

Conference_Location

Hamamatsu

Print_ISBN

0-7803-1880-3

Type

conf

DOI

10.1109/IMTC.1994.352066

Filename

352066