Title :
Phase distortion measurements for saturated MESFETs loaded with arbitrary impedance terminations
Author :
Ghannouchi, Fadhel M. ; Beauregard, Fransois ; Zhao, Guoxiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada
Abstract :
A measurement method is developed and implemented to simultaneously perform phase distortion, output power and power-added efficiency measurements for arbitrary load impedances over a wide dynamic power range on saturated MESFETs. The phase distortion is measured by a precise phase shifter and a phase comparator, which consists of two quadrature hybrids, two combiners and a matched pair of diode-detectors. A 30 dBm sweeping power range, including about 10~15 dBm beyond compression, has been performed on a GaAs MESFET NE8001 at 1.7 GHz for different loads
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric distortion; electric distortion measurement; electric variables measurement; gallium arsenide; microwave measurement; phase comparators; phase measurement; power amplifiers; semiconductor device testing; 1.7 GHz; GaAs; GaAs MESFET; NE8001; arbitrary impedance terminations; combiners; diode-detectors; output power; phase comparator; phase distortion measurement; power amplifier; power limiter; power-added efficiency measurements; precise phase shifter; quadrature hybrids; saturated MESFET; Distortion measurement; Dynamic range; Impedance measurement; MESFETs; Performance evaluation; Phase distortion; Phase measurement; Phase shifters; Power generation; Power measurement;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1994. IMTC/94. Conference Proceedings. 10th Anniversary. Advanced Technologies in I & M., 1994 IEEE
Conference_Location :
Hamamatsu
Print_ISBN :
0-7803-1880-3
DOI :
10.1109/IMTC.1994.352066
