Al-DyxOy-n-InP (100) structure preparation and properties

Al-Dy_xO_y-n-InP structures with dysprosium oxide film prepared by two different methods have been studied. The Dy _xO_y films with 40-120 nm thickness have obtained by Dy thermal evaporation in the O₂ environment (I) or in the vacuum (II) followed by thermal oxidation at 330-350°C in a dry oxygen stream. It follows for analysis of the experiments that the breakdown field in the Al-Dy_xO_y(I)-n-InP structure E_br is 2.5×10⁶ V/cm, the effective positive surface charge Q_ss is ~3×10¹¹ cm^-2 and the surface state density N_it is 5×10¹¹ cm^-2 eV^-1. The C-V characteristics hysteresis is of injection type with the magnitude less than 0.3 V. The Al-Dy_xO_y (II)-n-InP structure has surface charge magnitude Q_ss about ±1×10¹¹ cm^-2 surface state density N_it~1×10 ¹¹ cm^-2 eV^-1, ionic type hysteresis 1-3 V and E_br~5×10⁶