DocumentCode
2340836
Title
The technology of hard glass layers on silicon substrates and their application in microwave semiconductor devices
Author
Grabowski, M. ; Jablonski, W.
Author_Institution
Inst. of Electron. Technol., Warsaw, Poland
fYear
1998
fDate
5-7 Oct 1998
Firstpage
103
Lastpage
106
Abstract
Paper describes the method of preparing of hard glass layers on silicon substrates. The thickness of the wafers run from few to one hundred micrometers. Hard glass layers are applied for microwave semiconductor components as passivation layers or thick dielectric supports for beam-leads contacts to reduce parasitic capacitance
Keywords
beam-lead devices; dielectric materials; elemental semiconductors; glass; microwave diodes; passivation; silicon; Si; beam-lead contact; dielectric support; hard glass layer; microwave semiconductor device; parasitic capacitance; passivation; silicon substrate; Dielectric substrates; Glass; Microwave devices; Microwave technology; Parasitic capacitance; Passivation; Powders; Resists; Silicon; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730177
Filename
730177
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