Title :
The technology of hard glass layers on silicon substrates and their application in microwave semiconductor devices
Author :
Grabowski, M. ; Jablonski, W.
Author_Institution :
Inst. of Electron. Technol., Warsaw, Poland
Abstract :
Paper describes the method of preparing of hard glass layers on silicon substrates. The thickness of the wafers run from few to one hundred micrometers. Hard glass layers are applied for microwave semiconductor components as passivation layers or thick dielectric supports for beam-leads contacts to reduce parasitic capacitance
Keywords :
beam-lead devices; dielectric materials; elemental semiconductors; glass; microwave diodes; passivation; silicon; Si; beam-lead contact; dielectric support; hard glass layer; microwave semiconductor device; parasitic capacitance; passivation; silicon substrate; Dielectric substrates; Glass; Microwave devices; Microwave technology; Parasitic capacitance; Passivation; Powders; Resists; Silicon; Thermal stresses;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730177
