Title :
Parameter extraction and optimization for new industry standard VBIC model
Author :
Cao, X. ; McMacken, J. ; Stiles, K. ; Layman, P. ; Liou, J.J. ; Sun, A. ; Moinian, S.
Author_Institution :
Univ. of Central Florida, Orlando, FL, USA
Abstract :
A new bipolar transistor model called VBIC has recently been developed and is likely to replace the Gummel-Poon model as the new industry standard bipolar transistor model. This paper seeks to develop an accurate, comprehensive and efficient methodology to extract the parameters for the VBIC using the parameters extracted will be compared under various bias operation conditions
Keywords :
bipolar transistors; semiconductor device models; VBIC model; bipolar transistor; industry standard; optimization; parameter extraction; Bipolar integrated circuits; Bipolar transistor circuits; Bipolar transistors; Computer industry; Equivalent circuits; Integrated circuit modeling; Modems; Parameter extraction; Standards development; Temperature;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730178
