On capacitance of (Ua=300 V) ionized cluster beam deposited Pb/p-Si(100) Schottky junction

The room temperature C-V characteristics, exhibiting the distinct maxima around the reverse biased voltage, U_r, of ionized cluster beam deposited (ICB) metal/p-Si(100), metal=Pb and Ag, Schottky junctions, are interpreted in terms of the model of metal/metal-enriched interlayer/p-Si substrate structure. It is shown, that the resultant depletion layer capacitance, C, of such a structure, when derived by incorporating the (assumed biased voltage independent) excess interface charge density, σ, in conjunction with the spatially confined deep lying metal impurity levels within the metal enriched semiconductor region, could successfully describe the low frequency C-V data, as measured on these ICB U_a=300 V Schottky junctions