Thermal degradation of Al/AlGaAs Schottky junctions

Author

Horváth, Zs J. ; Veres, T. ; Van Tuyen, Vo ; Kovács, B. ; Elsawirki, A.I.A. ; Csontos, I. ; Szentpáli, B.

Author_Institution

Res. Inst. for Tech. Phys., Hungarian Acad. of Sci., Budapest, Hungary

fYear

1998

fDate

5-7 Oct 1998

Firstpage

129

Lastpage

132

Abstract

The thermal degradation of Al/Al_0.20Ga_0.80As Schottky junctions was studied up to 750°C, by steps of 50°C for 2 hours in forming gas. Current-voltage and capacitance-voltage measurements indicated, that the strong degradation of the diode parameters began after the annealing steps of 550°C. It was concluded that the degradation was connected with the interaction of the Al metallization with the AlGaAs substrate yielding doping concentration reduction near the interface and increasing the lateral inhomogeneity of the junction

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; aluminium; aluminium compounds; annealing; gallium arsenide; interface states; semiconductor device metallisation; 150 to 750 C; Al-Al_0.20Ga_0.80As; Al-AlGaAs; Al/Al_0.20Ga_0.80As Schottky junction; Schottky diodes; Schottky-Mott plots; annealing steps; apparent barrier height; capacitance-voltage measurements; current-voltage measurements; diode parameters; ideality factor; interface doping concentration reduction; lateral inhomogeneity; metallization-substrate interaction; probability functions; thermal degradation; Annealing; Artificial intelligence; Circuits; Doping; Engines; Gallium arsenide; Materials science and technology; Metallization; Schottky diodes; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

0-7803-4909-1

Type

conf

DOI

10.1109/ASDAM.1998.730182

Filename

730182