DocumentCode
2340965
Title
KRF excimer laser annealing for ultra shallow junction formation: approach for irradiation energy density reduction
Author
Shibahara, K. ; Kurobe, K. ; Ishikawa, Y. ; Kagawa, K. ; Niwatsukino, Y. ; Matsuno, A.
Author_Institution
Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
fYear
2003
fDate
23-26 Sept. 2003
Firstpage
13
Lastpage
16
Abstract
KrF excimer laser annealing has been investigated for ultra-shallow low resistive junction formation necessary for MOS device scaling. The junction sheet resistance can be improved by multi-pulse irradiation or introduction of heat assist. By the heat assist method, laser energy density to obtain 500 W/sq. for 20 nm depth junction was reduced about by half.
Keywords
MIS devices; electric resistance; elemental semiconductors; laser beam annealing; laser beam effects; silicon; 20 nm; KrF excimer laser annealing; MOS device scaling; Si; heat assist method; junction sheet resistance; laser irradiation energy density; multipulse irradiation; ultrashallow low resistive junction; Electrodes; Heating; Ion implantation; MOS devices; Optical pulses; Rapid thermal annealing; Solids; Space vector pulse width modulation; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on
Print_ISBN
0-7803-7874-1
Type
conf
DOI
10.1109/RTP.2003.1249119
Filename
1249119
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