Title :
Continuity in the development of ultra shallow junctions for 130-45 nm CMOS: the tool and annealing methods
Author :
Kuznetsov, Vladimir I. ; van Zutphen, A.J.M.M. ; Kerp, H.R. ; Vermont, P.G. ; Pages, X. ; van Hapert, J.J. ; van der Jeugd, K. ; Granneman, E.H.A.
Author_Institution :
ASM Int., Bilthoven, Netherlands
Abstract :
The roadmap for ultra-shallow junction formation (USJ) includes implant spike anneal and solid-phase epitaxial re-growth. The roadmap for the junction contacts foresees transition from CoSi2 to NiSi. The processes in the roadmap require extreme capabilities from RTP tools: heat-up and cool-down rates of hundreds of degrees per second, no pattern/emissivity dependence, precise temperature control, and operation at low temperature (starting from 200°C for NiSi formation). This paper describes a tool which enables continuity in the development of USJ for current and future technology nodes. It provides high ramp rates (300-900°C/sec), and operates in the temperature range of 100-1100°C with precise temperature control.
Keywords :
MIS devices; annealing; cobalt compounds; emissivity; nickel compounds; rapid thermal processing; solid phase epitaxial growth; 100 to 1100 degC; 130 to 45 nm; CMOS; CoSi2; NiSi; RTP; annealing; emissivity; roadmap; solid-phase epitaxial regrowth; ultra shallow junctions; Annealing; CMOS technology; Conductivity; Heat transfer; Implants; Optimization methods; Silicon; Temperature control; Temperature dependence; Temperature distribution;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on
Print_ISBN :
0-7803-7874-1
DOI :
10.1109/RTP.2003.1249125
