DocumentCode
2341342
Title
New method of surface barrier structures characterization using plasmon-polariton photoeffect
Author
Dmitruk, N.L. ; Mayeva, O.I. ; Mamykin, S.V. ; Yastrubchak, O.B.
Author_Institution
Inst. of Phys. of Semicond., Acad. of Sci., Kiev, Ukraine
fYear
1998
fDate
5-7 Oct 1998
Firstpage
211
Lastpage
214
Abstract
The new method of characterization of Schottky barrier surface polariton (SP waves based photodetectors is presented and its very promising ability of optimization of their parameters (diffusion length, Schottky barrier height electron and hole emission rates and surface recombination velocity, etc.) is shown
Keywords
Schottky barriers; photodetectors; polaritons; surface plasmons; Schottky barrier height; Schottky barrier surface polariton wave photodetector; diffusion length; electron emission rate; hole emission rate; plasmon-polariton photoeffect; surface barrier structure; surface recombination velocity; Charge carrier processes; Corrugated surfaces; Gratings; Optical films; Optical surface waves; Photodetectors; Plasmons; Resonance; Schottky barriers; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730201
Filename
730201
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