• DocumentCode
    2341367
  • Title

    Photoluminescent investigation of the effect of ultrasonic treatment upon defect states in M/n-n+ GaAs (M=Pt,W,Cr)

  • Author

    Ermolovich, I.B. ; Konakova, R.V. ; Milenin, V.V. ; Prokopenko, I.B. ; Gromashevskii, V.L.

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
  • fYear
    1998
  • fDate
    5-7 Oct 1998
  • Firstpage
    223
  • Lastpage
    226
  • Abstract
    The effect of ultrasonic treatment on the physico-chemical, structural, and electrical properties of Pt,Cr,W/n-n+-GaAs structures has been studied. It is shown that ultrasonic treatment produces spatial and chemical ordering of the contact region of GaAs. This decreases the reverse currents in diode structures with a Schottky barrier. A possible mechanism of the effect of ultrasonic treatment on the structural and chemical reorganization in an M/n-n+-GaAs contact is discussed
  • Keywords
    III-V semiconductors; Schottky barriers; chromium; defect states; gallium arsenide; photoluminescence; platinum; semiconductor-metal boundaries; tungsten; ultrasonic effects; Cr-GaAs; Pt-GaAs; Schottky barrier diode; W-GaAs; defect states; metal/n-n+-GaAs contact; photoluminescence; ultrasonic treatment; Chemicals; Chromium; Contacts; Gallium arsenide; Metallization; Physics; Pulse measurements; Spectroscopy; Substrates; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
  • Conference_Location
    Smolenice Castle
  • Print_ISBN
    0-7803-4909-1
  • Type

    conf

  • DOI
    10.1109/ASDAM.1998.730204
  • Filename
    730204
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2341367