On limitingly high temperature measurable by diode sensor

Author

Shwarts, Yu.M. ; Kulish, N.R. ; Borblik, V.L. ; Venger, E.F.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine

fYear

1998

fDate

5-7 Oct 1998

Firstpage

239

Lastpage

242

Abstract

The criterion limiting from above a range of temperatures measurable by means of diode sensor has been found. It is an equality of voltage drop U across p-n junction to thermal voltage kT/q. Use of this criterion has allowed to express a value of maximal measurable temperature T* through physical and design parameters of diode and an excitation current. It is shown that variation of diode parameters giving rise to extension of the range of temperatures measurable by means of diode sensor is accompanied by reducing of its sensitivity. As an example validity of determined theoretically relation between T* and silicon temperature sensor parameters has been experimentally verified

Keywords

semiconductor diodes; temperature sensors; Si; diode sensor; p-n junction; silicon temperature sensor; temperature measurement; Current measurement; Current-voltage characteristics; Diodes; P-n junctions; Spontaneous emission; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

0-7803-4909-1

Type

conf

DOI

10.1109/ASDAM.1998.730208

Filename

730208